3D Nanoelectronic Computer Architecture and Implementation by D. Crawley, K. Nikolic, M. Forshaw

By D. Crawley, K. Nikolic, M. Forshaw

It's changing into more and more transparent that the two-dimensional format of units on machine chips is commencing to prevent the advance of high-performance desktops. 3-dimensional buildings may be had to give you the functionality required to enforce computationally in depth projects. 3D Nanoelectronic laptop structure and Implementation experiences the cutting-edge in nanoelectronic machine layout and fabrication and discusses the architectural facets of 3-D designs, together with the potential use of molecular wiring and carbon nanotube interconnections. it is a beneficial reference for these excited about the layout and improvement of nanoelectronic units and know-how.

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Additional resources for 3D Nanoelectronic Computer Architecture and Implementation (Series in Materials Science and Engineering)

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About 108 bit s−1 . Inter-chip data transfer rates of 108 or 109 bit s−1 are modest, even by present-day standards. At first sight, it would appear to be quite simple to have edge connections to transfer the data from one layer to another. However, this would be very undesirable, because the data have to be collected from 500 000 uniformly distributed PEs in each layer, then passed from one layer to another, then re-distributed on the next layer. This would involve large high-speed 2D data buses and line drivers on each layer, with an accompanying heat dissipation of perhaps 1 W per layer.

A single 625 µm-thick silicon die patterned with aluminium was also measured. The underfill thickness varied between 5 and 150 µm. 8, middle) had the vias distributed over the area of the die. Vias were (a) 50 µm2 on a 100 µm pitch, (b) 20 µm2 on a 240 µm pitch and (c) 10 µm2 on a 60 µm pitch. 8, right) were at the periphery only. Silicon die thickness for the stacked structures was 50 µm. In the laser flash technique, the sample is placed in a vacuum chamber and the output from a pulsed laser is applied to one face of the sample.

50th IEEE Electron. Components Technol. Conf. pp 1467–9 [12] Yamaji Y, Ando T, Morofuji T, Tomisaka M, Sunohara M, Sato T and Takahashi K 2001 Thermal characterization of bare-die stacked modules with Cu through-vias Proc. 51st IEEE Electron. Components Technol. Conf. pp 730–7 [13] Fountain T J and Freeman H (ed) 1988 Introducing local autonomy to processor arrays Machine Vision—Algorithms, Architectures and Systems (New York: Academic) [14] Duff M J B and Fountain T J (ed) 1986 Celluar Logic Image Processing (New York: Academic) [15] Danielsson P E 1981 Getting the median faster Comput.

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